کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633680 | 993050 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies of Ga diffusion and the elimination of pinholes in Ga-doped β-FeSi2 films prepared by MBE
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Studies of Ga diffusion and the elimination of pinholes in Ga-doped β-FeSi2 films prepared by MBE Studies of Ga diffusion and the elimination of pinholes in Ga-doped β-FeSi2 films prepared by MBE](/preview/png/10633680.png)
چکیده انگلیسی
Our previous studies on the Ga doping of β-FeSi2 films proved that Ga atoms could be an effective p-type dopant by using the molecular beam epitaxy (MBE) method. However, a crucial problem was the generation of a great number of pinholes when a high concentration of Ga atoms was introduced into the β-FeSi2 films. In this report, we perform a qualitative investigation into Ga diffusion in β-FeSi2 layers with secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). We found that Ga atoms diffuse much faster in the β-FeSi2 layers than in Si, and they tend to congregate on the front surface of β-FeSi2 films during the post thermal annealing at 800 °C. However, the Ga is supposed to evaporate from the surface. Based on these results, we assumed that the formation of pinholes may be closely related to the Ga diffusion and evaporation in β-FeSi2 layers during the annealing process. In order to suppress the evaporation of Ga, we deposited an SiO2 capping layer (â¼500 nm in thickness) terminating on Ga-doped Fe/Si multilayers prior to the annealing. Preliminary results demonstrated that pinhole density was reduced by the SiO2 capping layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 929-934
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 929-934
نویسندگان
Ryo Kuroda, Zhengxin Liu, Yasuhiro Fukuzawa, Yasuhito Suzuki, Teruhisa Ootsuka, Shinan Wang, Masato Osamura, Naotaka Otogawa, Yasusi Hoshino, Yasuhiko Nakayama, Hisao Tanoue, Yunosuke Makita,