کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633687 | 993050 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon-based light emission after ion implantation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Electroluminescence of boron and phosphorus implanted samples has been studied for various implantation and annealing conditions. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. The band-to-band luminescence of phosphorus implanted diodes is observed to increase by more than one order of magnitude upon rising the sample temperature from 80Â K to 300Â K and a maximum internal quantum efficiency of 2% has been reached at 300Â K. The remarkably high band-to-band luminescence is attributed to a high bulk Shockley-Read-Hall lifetime, likely promoted by the gettering action of the implanted phosphorus. The anomalous temperature behavior of the efficiency can be explained by a temperature dependence of the lifetime characteristic of shallow traps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 967-972
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 967-972
نویسندگان
M. Kittler, T. Arguirov, A. Fischer, W. Seifert,