کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633688 | 993050 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Single dot optical spectroscopy of silicon nanocrystals: low temperature measurements
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Single dot spectroscopy allows studying properties of a single nanocrystal avoiding inhomogeneous broadening of the emission band. Here, data obtained by this technique for Si nanocrystals fabricated by electron beam lithography, plasma etching and subsequent size-reduction by oxidation are presented. First, blinking (on-off intermittence) of the luminescence was observed for most individual nanocrystals, although some exhibited relatively stable luminescence. As a result of the quantum confinement effect spectra with different emission wavelengths for different nanocrystals were recorded. While at room temperature the full width at half-maximum of the nanocrystal emission peaks was measured to be â¼100-150Â meV, at 80Â K the linewidth for some dots appeared to be about â¼25Â meV only. The observed temperature dependence of the homogeneous linewidth may lead to an understanding of the exciton-phonon interaction in indirect band-gap quantum dots.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 973-976
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 973-976
نویسندگان
Ilya Sychugov, Robert Juhasz, Augustinas Galeckas, Jan Valenta, Jan Linnros,