کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633692 | 993050 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of silicon nanocrystalline thin films grown by pulsed laser deposition
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Nanocrystalline silicon (nc-Si) thin films on silicon substrate have been prepared by using a pulsed laser deposition (PLD). The optical and structural properties of the films have been investigated as a function of deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence (PL) intensity abruptly decreased and peaks showed red shift. Annealing process can reduce the number of defect centers. Oxidation has considerable effects upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained due to three steps of growth, passivating defect centers, and isolation, sequentially.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 991-994
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 991-994
نویسندگان
Jong Hoon Kim, Kyung Ah Jeon, Gun Hee Kim, Sang Yeol Lee,