کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10633694 993050 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence of nanometric single silicon quantum wells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Photoluminescence of nanometric single silicon quantum wells
چکیده انگلیسی
We performed low temperature photoluminescence studies on nanometric thickness silicon single quantum wells. We show that electron hole recombination spectra are strongly dependent on the well thickness t and that carriers are in a strong quantum confinement regime for t ⩽ 3 nm. A set of fixed lines is identified and attributed to discrete and confined ground state levels or activated trap levels. A significant increase in the quantum efficiency is observed in the confinement regime and is associated with the progressive transformation of the Si layer into a planar distribution of two dimensional “nanoplates”.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1000-1003
نویسندگان
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