کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633698 | 993050 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterisation of room temperature blue emmiting Si/SiO2 multilayers
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
In this study we report results on a series of Si/SiO2 multilayers periods deposited by standard CMOS processes on thermally oxidised Si substrates. Each period was formed by alternating a low-pressure chemical vapour deposition (LPCVD) nanocrystalline silicon thin film and a SiO2 thin film obtained by atmospheric pressure chemical vapour deposition (APCVD). High-resolution TEM (HRTEM) and Raman spectroscopy have been used for the physical characterisation of the nc-Si/SiO2 multilayers. The HRTEM analysis revealed a columnar structure, with an average grain size of 15Â nm for the silicon layers. The Si-SiO2 interfaces were smooth with a surface roughness for silicon layers less than 1Â nm, as estimated from HRTEM analysis. Raman measurements demonstrate that the nanocrystalline silicon (nc-Si) layers are free-of-stress. Room temperature photoluminescence (PL) spectra, obtained by using a 325Â nm continuous wave (CW) laser excitation, showed a broad blue peak centred on 440Â nm. The intensity of the blue PL band increased with the number of periods in the nc-Si/SiO2 multilayers. The origin of this intense room temperature blue PL band is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1020-1025
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1020-1025
نویسندگان
M. Modreanu, E. Aperathitis, M. Androulidaki, M. Audier, O. Chaix-Pluchery,