کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10633708 993050 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence and electroluminescence of amorphous SiOx films prepared by reactive evaporation of silicon with oxygen
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Photoluminescence and electroluminescence of amorphous SiOx films prepared by reactive evaporation of silicon with oxygen
چکیده انگلیسی
By reactive evaporation of pure silicon in a molecular oxygen atmosphere, thin films of amorphous SiOx can be obtained with 0.7 ⩽ x ⩽ 1.85. The composition and the structure of the films were investigated by energy dispersive X-ray spectroscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. By a judicious choice of the oxygen pressure, the as-deposited films exhibit visible room-temperature photoluminescence with a peak centered at about 650 nm. At the liquid-nitrogen temperature, some samples also present an electroluminescence peak centered at 740 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1074-1078
نویسندگان
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