کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633711 | 993050 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Super linear position sensitive detectors using MIS structures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
This work reports on the fabrication process and performances presented by metal insulator semiconductor (MIS) linear position sensitive detectors (PSD) with an active length of 6Â cm. The use of long sensitive areas allows the PSD to achieve higher resolution without the need of a highly accurate light spot integration mechanism. The PSD is built in a multilayered structure consisting of Cr/a-Si:H (n+ doped)/a-Si:H (intrinsic)/SiOx (passivation layer)/Au, where the active a-Si:H layers were deposited by a modified triode plasma enhanced chemical vapour deposition (MTPECVD), which allows the deposition of highly electronic grade material with a low (â1Â ÃÂ 1015Â cmâ3) defect density inferred by CPM. The sensor linearity and sensitivity shows dependence on the sensor width to length ratio and on the value of load resistance. Sensitivities of more than 30Â mV/cm were achieved with linearity near 99%. Besides that, this type of MIS structure allows an improved spectral response near the UV region and has the maximum response at 540Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1088-1092
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1088-1092
نویسندگان
H. Águas, L. Pereira, D. Costa, E. Fortunato, R. Martins,