کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633713 | 993050 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ge dot mid-infrared photodetectors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Si-based normal incident mid-infrared photodetectors using Ge dots were investigated. P-I-P structures of boron-doped Ge dots embedded in the intrinsic region were grown using solid source molecular beam epitaxy. The dark current was strongly dependent on the doping level in Ge dot. The structure grown at 700 °C exhibited photoresponse peaking at 3.5 μm. FTIR measurements on identical structure showed an absorption band consistent with the photocurrent spectra. At lower temperatures, the response intensity decreased due to freeze-out of the holes. The devices also showed photovoltaic effect. The response increased with increasing bias.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1097-1100
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 1097-1100
نویسندگان
Song Tong, Joo-Young Lee, Hyung-Jun Kim, Fei Liu, Kang L. Wang,