کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10638143 | 995352 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CVD of Ru, Pt and Pt-based alloy thin films using ethanol as mild reducing agent
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Noble metal thin films (Pt and Ru) were grown at 250 °C, using commercially available precursors, by the pulsed spray evaporation chemical vapor deposition (PSE-CVD) technique. The growth process relies on the thermally activated reaction of ethanol with the metal acetylacetonate precursors. The synthesized polycrystalline films are pure metal phase and crystallize in hexagonal (Ru) and cubic (Pt) structures. The formation of an interfacial silicide phase was noticed in the case of the Pt growth on silicon substrates. The films are smooth, continuous and show a steady growth without any noticeable incubation time. The single-step growth of Pt-based alloys, Pt-Co and Pt-Cu, with controlled composition was performed by simply adjusting the composition of the liquid feedstock.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 125, Issue 3, 15 February 2011, Pages 757-762
Journal: Materials Chemistry and Physics - Volume 125, Issue 3, 15 February 2011, Pages 757-762
نویسندگان
P. Antony Premkumar, N.S. Prakash, F. Gaillard, N. Bahlawane,