کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10638188 | 995407 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits](/preview/png/10638188.png)
چکیده انگلیسی
Barium strontium titanate (BST) thin-films deposited on a SiO2/Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 °C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 °C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 94, Issue 1, 15 November 2005, Pages 114-118
Journal: Materials Chemistry and Physics - Volume 94, Issue 1, 15 November 2005, Pages 114-118
نویسندگان
Y.R. Liu, P.T. Lai, G.Q. Li, B. Li, J.B. Peng, H.B. Lo,