کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10638251 | 995414 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study of silicon nitride nanotube synthesis at relative low temperature by thermal-heating chemical-vapor deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thermal-heating chemical-vapor deposition has been used to synthesize Si3N4 nanotubes by heating tetra-ethyl-ortho-silicate at 165 °C to get vapor to flow in and providing nitrogen gas to the reaction chamber as the source of Si and N, respectively. A stainless-steel wire was coiled as entangled wire scaffold with a pore size of 1 mm. The wire scaffold was placed in the middle part of the reaction chamber. Cr, Fe and Mo, contained in the stainless-steel, served as catalysts to provide in situ growth of Si3N4 nanotubes on the coil surface at a relative low reactant temperature (1000 °C) through the vapor-liquid-solid growth mechanism. Most of the nanotubes are end-closed by a metallic particle. All the nanotubes were identified as α-Si3N4 in crystal structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 93, Issue 1, 15 September 2005, Pages 10-15
Journal: Materials Chemistry and Physics - Volume 93, Issue 1, 15 September 2005, Pages 10-15
نویسندگان
Feng-Huei Lin, Chung-King Hsu, Tzu-Piao Tang, Jinn-Shing Lee, Jia-Yu Lin, Pei-Leun Kang,