کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10638273 | 995414 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metallorganic chemical vapor deposition of metallic Ru thin films on biaxially textured Ni substrates using a Ru(EtCp)2 precursor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ruthenium (Ru) films on rolling-assisted biaxially textured Ni substrates (RABiTs) were deposited by liquid source chemical vapor deposition using bis-(ethyl-Ï-cyclopentadienyl)ruthenium (Ru(C2H5C5H4)2). The thermal decomposition process of the precursor was investigated by Fourier transform infrared spectroscopy (FTIR), mass spectroscopy, and differential scanning calorimetry/thermogravimetric analyses (DSC/TGA). The crystalline structure and resistivity of Ru thin films were investigated. The Ru films were polycrystalline and had a grainy structure. Although the thermal decomposition of the precursor required a sufficient amount of oxygen, the experimental results showed that up to a certain concentration of oxygen (i.e. O2/Ar â¼Â 30/10), Ru metal film was deposited without any detectable RuO2 impurities. A higher deposition temperature and a higher ratio of O2/Ar will be beneficial to the growth of (0 0 2) orientation. They showed a low resistivity of about 10-20 μΩ cm, which is sufficiently low for them to be used as a buffer layer in superconductor tapes or electrode materials in dielectric capacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 93, Issue 1, 15 September 2005, Pages 142-148
Journal: Materials Chemistry and Physics - Volume 93, Issue 1, 15 September 2005, Pages 142-148
نویسندگان
Hu-Yong Tian, Helen-Lai-Wa Chan, Chung-Loong Choy, Jong-Wan Choi, Kwang-Soo No,