Enhancement of magneto-conductance in n-Si/n-PS/NPB structures at room temperature

Hybrid organic-inorganic semiconductor heterojunction with a sandwich structure have been prepared and studied. The inorganic semiconductor is n-type Porous Silicon (n-PS) elaborated on n-type crystalline silicon, the used conjugated polymer is the N,N′-diphenyl-N,N′-bis(1-naphthyl-pheny1)-(1,1′-biphenyl)-4,4′-diamine (NPB). Current-voltage (I-V) at transverse static magnetic field effect was used to study the electrical properties of the devices at room temperature. The electrical parameters such as the ideality factor 'n', the barrier height and the series resistance are determined from the I-V curve. We report the observed magneto-conductance (MC) in a weak magnetic field. The observed positive MC was enhanced when we partially filled pores with the NPB. This effect reaches up to 4.7% at a magnetic field of 0.8 T.