کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10639864 | 995719 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation damage study of MeV ions-implanted Nd:YVO4 crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Damage formation mechanism of Nd:YVO4 implanted with MeV ions is investigated. MeV Si+ ions were implanted into Nd:YVO4 crystal, and the lattice damage was measured using Rutherford backscattering spectroscopy/channeling (RBS/C) method. The damage creation kinetic indicates a significant contribution from electronic energy loss to the surface damage. A detailed analysis allows us to deduce the different contributions from electronic and nuclear stopping powers to the lattice damage production. An obvious difference in extent of damage from 1 MeV and 3 MeV Si+ implantations also implies that there exists a threshold value of the electronic energy deposition for damage formation. The exact value of threshold is obtained by comparison with the experimental data obtained from 3 MeV O+, F+ and Si+ implantation results, which turns out to be (1.7 ± 0.1) keV/nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 178, Issue 20, 1 December 2013, Pages 1464-1468
Journal: Materials Science and Engineering: B - Volume 178, Issue 20, 1 December 2013, Pages 1464-1468
نویسندگان
Yu-Jie Ma, Fei Lu, Jiao-Jian Yin, Chang-Dong Ma,