کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10639866 | 995719 | 2013 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and characterization of nano/amorphous dual-phase FINEMET microwires
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and characterization of nano/amorphous dual-phase FINEMET microwires Fabrication and characterization of nano/amorphous dual-phase FINEMET microwires](/preview/png/10639866.png)
چکیده انگلیسی
A nano/amorphous dual-phase FINEMET microwire was fabricated directly from molten alloy without any interstage annealing by a home-built melt extraction technique (MET). The microstructure, mechanical and pronounced electromagnetic interference shielding (EMI) effectiveness of this dual-phase microwire has been systematically evaluated. The structural analysis reveals that the as-cast FINEMET microwire consists of two distinct structures, i.e., amorphous and nanocrystalline phase due to their different cooling characteristics. Compared with other reported FINEMET alloys, the extracted microwire exhibits a superior high tensile strength of 1800Â MPa. These nanocrystals enabled dual-phase microwires also exhibit large EMI SE values in the frequency range of 8-12Â GHz (X-band) due to the multiple magnetic loss mechanisms associated with their intrinsic structural characteristics. The combination of excellent mechanical properties and electromagnetic properties make this kind of melt-extracted dual-phase FINEMET microwire promising for a range of structure and multifunctional applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 178, Issue 20, 1 December 2013, Pages 1483-1490
Journal: Materials Science and Engineering: B - Volume 178, Issue 20, 1 December 2013, Pages 1483-1490
نویسندگان
H. Wang, F.X. Qin, D.W. Xing, F.Y. Cao, H.X. Peng, J.F. Sun,