Silicon nanocrystals produced by solid phase crystallisation of superlattices for photovoltaic applications

► The superlattice approach permits the growth of size-controlled Si QDs in SiO2 and Si3N4. ► Photoluminescence measurements show quantum confinement of Si QDs in SiO2 matrix. ► Maximum Voc of an Si QD device is 518 mV so far.