کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10639902 995734 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of laser-induced damage in silicon solar cells during selective ablation processes
ترجمه فارسی عنوان
مشخصه آسیب ناشی از لیزر در سلول های خورشیدی سیلیکون در طی فرآیندهای تخلیه انتخابی
کلمات کلیدی
پردازش لیزری، تخریب دی الکتریک، طول عمر حامل اقلیت، فوتولومینسانس، سلول های خورشیدی سیلیکون،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
Selective laser ablation of silicon nitride layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed with a nanosecond UV laser at various energy densities ranging from 0.2 to 1.5 J cm−2. Optical microscopy was used as a simple mean to assess the ablation threshold that was correlated to the temperature at the interface between the silicon nitride coating and the silicon substrate. Minority carrier lifetime measurements were performed using a microwave photo-conductance decay technique. Band to band photoluminescence spectroscopy proved to be a sensitive technique to qualify the laser-induced damage to the silicon substrate. The crystalline structure of silicon seemed to be maintained after silicon nitride ablation as shown by UV reflectivity measurements. Laser parameters corresponding to fluences of around 0.4 J cm−2 were found to achieve selective ablation of SiNx without causing detrimental damage to the surrounding material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 178, Issue 9, 15 May 2013, Pages 682-685
نویسندگان
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