کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10639958 | 995861 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence of the microstructural and the electrical properties on the annealing temperature and Hg-cell fluxes for in situ annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Scanning electron microscopy images showed that the surface morphologies of in situ annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy were mirror-like with no indication of pinholes. Selected area electron diffraction patterns and high-resolution transmission electron microscopy images of the as-grown and the in situ annealed Hg0.7Cd0.3Te epilayers showed that the microstructural properties of the Hg0.7Cd0.3Te epilayers were improved by annealing. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers by in situ annealing and that the carrier concentration and the mobility of the Hg0.7Cd0.3Te epilayers were dramatically changed by varying the annealing temperature and Hg-cell fluxes. These results indicate that the microstructural and the electrical properties of Hg1âxCdxTe epilayers can be significantly affected by the in situ annealing conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 122, Issue 1, 25 August 2005, Pages 80-83
Journal: Materials Science and Engineering: B - Volume 122, Issue 1, 25 August 2005, Pages 80-83
نویسندگان
Y.S. Ryu, T.W. Kang, T.W. Kim,