کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640087 | 995870 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
High quality SiO2 film was successfully deposited onto AlGaN as a dielectric layer for our AlGaN/GaN MOS-HFETs using the photochemical vapor deposition (photo-CVD) technique, with D2 lamp as the excitation source. By comparing with other conventional AlGaN/GaN HFETs with similar structures, it was found that the gate leakage current can be reduced by more than four orders of magnitude, even at elevated temperatures. With Vds = 20 V and Vgs = â8 V (cut-off region), the leakage current at room temperature was about 6.46 mA/mm, which is almost identical to that (6.48 mA/mm) of measured at 300 °C, and most of all, relatively larger Ids,max and gm,max could still be achieved when compared to conventional HFETs. In addition, the extrinsic cut-off frequencies fT's for both MOS-HFETs and HFETs were measured to be 4.05 GHz and 3.36 GHz, respectively. Furthermore, the corresponding fmax's for MOS-HFETs and HFETs were also found to be 6.85 GHz and 5.45 GHz, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 119, Issue 1, 15 May 2005, Pages 25-28
Journal: Materials Science and Engineering: B - Volume 119, Issue 1, 15 May 2005, Pages 25-28
نویسندگان
C.K. Wang, R.W. Chuang, S.J. Chang, Y.K. Su, S.C. Wei, T.K. Lin, T.K. Ko, Y.Z. Chiou, J.J. Tang,