کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10640156 995873 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Parametric study on non-vacuum chemical vapor deposition of CuInS2 from a single-source precursor
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Parametric study on non-vacuum chemical vapor deposition of CuInS2 from a single-source precursor
چکیده انگلیسی
Copper indium disulfide (CuInS2) films were deposited by aerosol-assisted chemical vapor deposition (AACVD) from a single-source precursor (SSP), (PPh3)2Cu(SEt)2In(SEt)2. Various deposition parameters were explored to understand how they affect the crystallography, stoichiometry, and morphology of the deposited films and the quality of fabricated solar cells. Parameters explored included the deposition temperature, location of substrate within CVD reactor, precursor concentration in toluene carrier solvent, and post-deposition annealing in a S-rich atmosphere. CuInS2 films have been fabricated into complete solar cells with the top-down composition of Al/ZnO:F/CdS/CuInS2/Mo/glass and the efficiency of 1.0% under simulated AM0 illumination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 116, Issue 3, 15 February 2005, Pages 403-408
نویسندگان
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