A theoretical analysis of sensitivity in semiconductor measurement by microwave photoconductance decay

The aim of this work is to determine the sensitivity in the semiconductor measurement by microwave photoconductance decay. The reflection coefficient and the sensitivity were determined by solving the Maxwell equations and the method of a transfer matrix, then the dependence of sensitivity on the dark conductivity of sample, the distance between sample and metal reflector, and the thickness of sample for the general and two special measurement configurations were discussed. It is found that for all conductivity samples, the case of putting a metal reflector behind the detected sample with an optimal distance helps the sensitivity higher.