کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640185 | 995877 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of processing parameters on PZT thick films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of processing parameters on PZT thick films Influence of processing parameters on PZT thick films](/preview/png/10640185.png)
چکیده انگلیسی
We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO2/Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm2 at 250 kV/cm for PZT thick film and 30 μC/cm2 at 450 kV/cm for La-doped PZT thick film. After 109 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 116, Issue 1, 15 January 2005, Pages 19-24
Journal: Materials Science and Engineering: B - Volume 116, Issue 1, 15 January 2005, Pages 19-24
نویسندگان
Oliver Huang, Amit Bandyopadhyay, Susmita Bose,