کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10640226 995880 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Raman and photoluminescence investigations of impurities in zinc-rich ZnxCd1−xSe
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Raman and photoluminescence investigations of impurities in zinc-rich ZnxCd1−xSe
چکیده انگلیسی
Thin films of zinc-rich ZnxCd1−xSe were grown on GaAs substrate using metal-organic-chemical-vapor-deposition (MOCVD) technique. Bound-longitudinal-optical (B-LO) phonon modes in the first-order and higher-order Raman spectra of ZnxCd1−xSe have been observed for the first time. Presence of these phonon modes are ascribed to impurities in the sample incorporated from the substrate. The modes are explained within the purview of a model used earlier for bound modes in GaP. Photoluminescence spectroscopy also reveals a deep energy band which suppresses the near band edge emission for x = 0.8, an alloy composition for which B-LO phonons are observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 119, Issue 2, 25 May 2005, Pages 171-176
نویسندگان
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