Electrical, optical, and structural characterization of arsenic-tin oxidized transparent conducting films

► Global structural and optoelectronic study of arsenic-doped SnO2 was carried out. ► Doping of arsenic in SnO2 can be described by As→SnO2VSnx+e′+Asi. ► SnO2-orthorhombic phase in As-doped SnO2 film disappeared at 3.1% As doping level. ► Resistivity of 4.6 × 10−2 Ω cm was obtained with 0.6% As doping level. ► Forming oxygen vacancies improves the conductivity by 400% and mobility by 150%.