کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653130 | 1002829 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dilute magnetic semiconductors based on wide bandgap SiO2 with and without transition metal elements
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Material designs based on the first principle calculations of electronic structures are proposed for α-quartz SiO2-based dilute magnetic semiconductors. The incorporation of transition metals (TMs) into Si sites and of the non-TM atoms into O sites are treated for various concentrations. At temperatures higher than room temperature, most of the TM-doped SiO2 have no magnetism, yet Si1âxMnxO2 might achieve the ferromagnetism. The substitution of O by non-TM atoms as C or N also induces the magnetism in the host. However, while the N's substitution induces the ferromagnetism, C's substitution causes an anti-ferromagnetic behavior in the host material SiO2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 136, Issue 1, October 2005, Pages 1-5
Journal: Solid State Communications - Volume 136, Issue 1, October 2005, Pages 1-5
نویسندگان
Van An Dinh, Kazunori Sato, Hiroshi Katayama-Yoshida,