کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653158 | 1002841 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferromagnetism in amorphous Ge1âxMnx grown by low temperature vapor deposition
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Magnetic properties of amorphous Ge1âxMnx thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was â¼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge1âxMnx thin films are 5.0Ã10â4â¼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge1âxMnx thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge1âxMnx thin films have p-type carrier and hole densities are in the range from 7Ã1017 to 2Ã1022 cmâ3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 134, Issue 9, June 2005, Pages 641-645
Journal: Solid State Communications - Volume 134, Issue 9, June 2005, Pages 641-645
نویسندگان
Sang Soo Yu, Tran Thi Lan Anh, Young Eon Ihm, Dojin Kim, Hyojin Kim, Sangjun Oh, Chang Soo Kim, Hyun Ryu,