کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653199 | 1002847 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rabi oscillations in two-level semiconductor systems
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Rabi oscillations in two-level semiconductor systems Rabi oscillations in two-level semiconductor systems](/preview/png/10653199.png)
چکیده انگلیسی
Rabi oscillations in coherent optical excitations in bulk GaAs and quantum dot two-level systems may be converted into deterministic photocurrents, with the impurities or dots providing the tag for each qubit. Here we perform a theoretical analysis of the damping of Rabi oscillations in two-level semiconductor systems. Present calculations, through optical Bloch equations on excitonic two-level InxGa1âxAs quantum-dot systems, are found in good agreement with the corresponding experimental data. Calculated results indicate that the nature underlying the dephasing mechanism associated to the damping of the measured Rabi oscillations, which has previously remained as an open question, may be associated with a field-dependent recombination rate related to the inhomogeneous broadening of the excitonic lines in the InxGa1âxAs two-level QD system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 135, Issue 6, August 2005, Pages 386-389
Journal: Solid State Communications - Volume 135, Issue 6, August 2005, Pages 386-389
نویسندگان
H.S. Brandi, A. Latgé, Z. Barticevic, L.E. Oliveira,