کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653286 | 1002861 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Estimation of built-in dipole moment in InAs quantum dots
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Estimation of built-in dipole moment in InAs quantum dots Estimation of built-in dipole moment in InAs quantum dots](/preview/png/10653286.png)
چکیده انگلیسی
We have fabricated a Schottky diode embedding InAs self-assembled quantum dots (QDs) grown by alternately supplying In and As sources. As a function of the electric field, we have investigated the photoluminescence (PL) for the InAs QDs in the Schottky diode at 300Â K. We controlled the electric field in order that the QD layer was located in the depletion region of Schottky diode. The relationship between the electric field and the depletion width of the Schottky diode was deduced through the capacitance-voltage measurement. The Stark shift was observed in PL spectra for QDs; the energy of the PL line shifted to the lower energy as the electric field increased. It was also observed that the PL emission intensity gradually decreased. By the fitting to the experimental data, we determined a built-in dipole moment, corresponding to an electron-hole separation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 134, Issue 6, May 2005, Pages 391-395
Journal: Solid State Communications - Volume 134, Issue 6, May 2005, Pages 391-395
نویسندگان
Y.M. Park, Y.J. Park, J.D. Song, J.I. Lee,