کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653287 | 1002861 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation and electronic properties of double-walled boron nitride nanotubes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation and electronic properties of double-walled boron nitride nanotubes Formation and electronic properties of double-walled boron nitride nanotubes](/preview/png/10653287.png)
چکیده انگلیسی
The electronic and structural properties of double-walled boron nitride (BN) nanotubes are studied using the first principle pseudopotential density functional method. It is shown that zigzag-type tubes have a larger formation energy for the double-walled configuration than the armchair-type structure, and that interwall stacking plays a significant role for intertube interactions and in the formation of multiwall BN nanotubes. The fundamental energy gap of double-walled BN nanotubes was found to be smaller than that of single-walled tubes mostly due to band shift. It is shown that the electronic properties of double-walled BN tubes exhibit a slight but noticeable difference for the zigzag and armchair type tubes studied.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 134, Issue 6, May 2005, Pages 397-402
Journal: Solid State Communications - Volume 134, Issue 6, May 2005, Pages 397-402
نویسندگان
Seung-Hoon Jhi, David J. Roundy, Steven G. Louie, Marvin L. Cohen,