کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653388 | 1002873 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Scanning tunneling microscopy and spectroscopy of Se and Te nanorods
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
Se and Te nanorods obtained by a self-seeding solution growth process have been examined by scanning tunneling microscopy and spectroscopy (STM/STS). The diameters of the rods, as revealed by STM images were in the range of 10-60Â nm, with aspect ratios of 10-20. The I-V data of the Se and Te nanorods exhibit band gaps of â¼1.3 and â¼0.4Â eV, respectively, nearly independent of the diameter, and these values are close to the bulk values of Se and Te. In both the cases, the nanorods possess a small but finite conductance even in the band gap regions, the conductance value increasing with the diameter of the rod. A tunneling mechanism involving the surface states is proposed to explain this phenomenon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 136, Issue 3, October 2005, Pages 169-172
Journal: Solid State Communications - Volume 136, Issue 3, October 2005, Pages 169-172
نویسندگان
Ujjal K. Gautam, Gautam Gundiah, G.U. Kulkarni,