کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653584 | 1002894 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magnetic properties of p-doped GaMnN diluted magnetic semiconductors containing clusters
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Magnetic properties of p-doped GaMnN diluted magnetic semiconductors, having both randomly distributed Mn ions and MnxNy clusters, are presented under the theory based on the hole-mediated ferromagnetism. The critical temperature of the second order phase transition between ferromagnetic and paramagnetic phases and the magnetization as a function of temperature are obtained from the free energy calculation. The Curie temperature of the p-doped GaMnN containing clusters depends not on the type of clusters but on the composition rate of clusters. The behavior of the spontaneous magnetization as a function of temperature is strongly affected by carrier concentration. The p-doped GaMnN diluted magnetic semiconductors containing clusters have room temperature ferromagnetism regardless of the magnetic type of clusters, as long as hole-mediated spin-spin interactions occur in them.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 133, Issue 10, March 2005, Pages 629-633
Journal: Solid State Communications - Volume 133, Issue 10, March 2005, Pages 629-633
نویسندگان
Nammee Kim, S.J. Lee, T.W. Kang,