کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653719 | 1002907 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of quantum dot density on excitonic transport and recombination in CdZnTe/ZnTe QD structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of quantum dot density on excitonic transport and recombination in CdZnTe/ZnTe QD structures Influence of quantum dot density on excitonic transport and recombination in CdZnTe/ZnTe QD structures](/preview/png/10653719.png)
چکیده انگلیسی
We report on dynamics of excitons in CdxZn1âxTe/ZnTe quantum dots (QDs) and present information of excitonic transport and recombination. Due to different growth methods, samples with different QD's densities were obtained. Time-resolved measurements reveal three decay mechanisms: (i) radiative recombination of excitons in the individual QDs; (ii) thermally activated escape of excitons and (iii) escape due to tunneling (hopping). In the high QD-density samples the hopping (rHB=2700Â nsâ1) is two orders of magnitude more efficient than in the low QD-density samples (rHB=33Â nsâ1). Radiative recombination rates are similar in both types of samples, rR=1-1.3Â nsâ1. Due to the good radiative to nonradiative recombination ratio, the low-density QDs can be a potential source of entangled photon pairs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 133, Issue 6, February 2005, Pages 369-373
Journal: Solid State Communications - Volume 133, Issue 6, February 2005, Pages 369-373
نویسندگان
K.P. Korona, P. Wojnar, J.A. Gaj, G. Karczewski, J. Kossut, J. Kuhl,