کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10653719 1002907 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of quantum dot density on excitonic transport and recombination in CdZnTe/ZnTe QD structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Influence of quantum dot density on excitonic transport and recombination in CdZnTe/ZnTe QD structures
چکیده انگلیسی
We report on dynamics of excitons in CdxZn1−xTe/ZnTe quantum dots (QDs) and present information of excitonic transport and recombination. Due to different growth methods, samples with different QD's densities were obtained. Time-resolved measurements reveal three decay mechanisms: (i) radiative recombination of excitons in the individual QDs; (ii) thermally activated escape of excitons and (iii) escape due to tunneling (hopping). In the high QD-density samples the hopping (rHB=2700 ns−1) is two orders of magnitude more efficient than in the low QD-density samples (rHB=33 ns−1). Radiative recombination rates are similar in both types of samples, rR=1-1.3 ns−1. Due to the good radiative to nonradiative recombination ratio, the low-density QDs can be a potential source of entangled photon pairs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 133, Issue 6, February 2005, Pages 369-373
نویسندگان
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