کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10654286 1002959 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of K0.5Bi0.5TiO3 thin films deposited on different substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Properties of K0.5Bi0.5TiO3 thin films deposited on different substrates
چکیده انگلیسی
K0.5Bi0.5TiO3 thin films were deposited on fused quartz, n-type Si(100) and Pt/TiO2/SiO2/Si substrates by repeated coating/dying cycles. X-ray diffraction analysis shows that the films annealed at 700 °C for 10 min present perovskite phase. Atomic force microscopy reveals that the surface morphology is smooth, the grain sizes of the films on Si(100) are quite larger than on fused quartz. The capacitance-voltage hysteresis loops at various sweeping speed are collected as are polarization types. The films in the ON and OFF states are relatively stable. The films also exhibit a hysteresis loop at an applied voltage of 4 V, with a remanent polarization of 9.3 μC/cm2 and a coercive voltage of 2 V. The insulating property of negative bias voltage is better than that of positive bias voltage. The transmittance of the films is between 74 and 82% in the wavelength range of 200-2000 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 134, Issue 7, May 2005, Pages 461-464
نویسندگان
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