کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674643 | 1010322 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CMP Pad Break-in Time Reduction in Silicon Wafer Polishing
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی صنعتی و تولید
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چکیده انگلیسی
This paper investigated the correlation between the surface conditions of the polishing pad and the break-in phenomena during silicon wafer polishing. The break-in is defined as pad conditioning to insure first polishing is consistent with second and following wafer polishing. A piezoelectric force sensor and an infrared (IR) sensor were installed on a silicon wafer polisher. The signals for friction force and temperature of the pad surface were measured simultaneously for monitoring the break-in phenomena during the polishing process. As a result of monitoring, the pad surface condition had the most significant effect on the break-in phenomena than compared to the other polishing parameters. Therefore, the control of the surface condition of the pad ensures the reduction of the break-in time during silicon wafer polishing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: CIRP Annals - Volume 56, Issue 1, 2007, Pages 357-360
Journal: CIRP Annals - Volume 56, Issue 1, 2007, Pages 357-360
نویسندگان
H.D. Jeong, K.H. Park, K.K. Cho,