Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode

Mapping of charge pulses was accomplished by a novel computational approach, which consists in mapping the Gunn's weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i.e. diffusion length and minority carrier lifetime).