کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674847 | 1010476 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-energy oxygen bombardment of silicon by MD simulations making use of a reactive force field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In this paper, the modification of the force field to allow for an exact description of the sputtering process, the influence of this modification on previous results obtained for phase transitions in glasses as well as properties of particles sputtered at 250-1000Â eV from a mono-crystalline silicon sample will be presented. The simulation results agree qualitatively with predictions from experiments or models. Most atoms are sputtered from the first monolayer: for an impact energy of 250Â eV up to 86% of the atoms are sputtered from the first monolayer and for 750Â eV, this percentage drops to 61%, with 89% of the atoms being sputtered from the first two monolayers. For sputtering yields, 250 and 500Â eV results agree with experimental data, but for 750Â eV sub-channelling in the pristine sample becomes more important than in experiments where samples turn amorphous under ion bombardment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 14, 15 July 2011, Pages 1555-1558
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 14, 15 July 2011, Pages 1555-1558
نویسندگان
P. Philipp, L. Briquet, T. Wirtz, J. Kieffer,