کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674853 | 1010476 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular dynamics simulations of large fluorine cluster impact on silicon with supersonic velocity
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The etching process by very large reactive gas cluster impact was investigated by molecular dynamics (MD) simulations. Fluorine-molecule clusters with the size up to 100,000Â atoms (50,000 F2 molecules) were irradiated on silicon (1Â 0Â 0) targets at supersonic velocity regime (0.1-1Â eV/atom, 1.0-3.2Â km/s). The MD simulations revealed that the existence of threshold energy-per-atom around 0.3Â eV/atom (1.75Â km/s) to cause surface deformation and enhancement of Si desorption. When the incident energy-per-atom is less than the threshold, the incident cluster breaks up itself on the target without surface deformation. The fluorine molecules in the cluster spread in the lateral direction along the target surface, and some part of them decompose and adsorbs on the target to form silicon fluoride composites. On the other hand, the clusters penetrate the surface of silicon target when the energy-per-atom is larger than 0.3Â eV/atom. In these collisional processes, the target surface is deformed to create shallow crater shape. The incident fluorine molecules are preferentially concentrated at the bottom of the crater, which resulted in high desorption yield of silicon as in the form of SiF2, SiF3 and SiF4.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 14, 15 July 2011, Pages 1582-1585
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 14, 15 July 2011, Pages 1582-1585
نویسندگان
Takaaki Aoki, Toshio Seki, Jiro Matsuo,