کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674903 | 1010552 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular-dynamics simulation of germanium film growth by cluster deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Molecular-dynamics simulation of germanium film growth by cluster deposition Molecular-dynamics simulation of germanium film growth by cluster deposition](/preview/png/10674903.png)
چکیده انگلیسی
Ge films have been grown by depositing Ge-atom clusters with different initial energies on Si(0Â 0Â 1) substrates with molecular-dynamics simulations utilizing the Stillinger-Weber (SW) many-body potentials for Ge and Si. The structural properties and the stress distribution of the films have been characterized. We find that the films formed by depositing the clusters with higher initial energies have better qualities and the stress values in such films are a little higher. We have also compared the stress value with the experimental data. In addition, we find that the stress distribution is more gradual throughout the system in the case of higher cluster energy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 234, Issue 4, July 2005, Pages 487-493
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 234, Issue 4, July 2005, Pages 487-493
نویسندگان
L. Zhang, J.Y. Feng,