کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674925 | 1010568 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resonant coherent excitation of C5+ in Si observed with backward electron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Resonant coherent excitation (RCE) of C5+ has been observed with the loss electron yield produced by ionization of the projectiles, measured in the backward direction from a bulk Si crystal. At a resonance energy of 3.01 MeV/u for Siã1 0 0ã, the loss electron yield obtained from the difference between the electron yield for the C5+ and C6+ beams has been increased by a factor of 1.2-1.3 due to RCE from the ground state to the first excited state (n = 1 to 2) of C5+. The backward spectroscopy of loss electrons allows observations of RCE that is restricted within an extremely thin surface layer of the bulk crystals. In addition, the RCE-assisted electron loss process is of vital importance for precise understanding of the loss electron spectra from single crystal targets.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 229, Issue 2, March 2005, Pages 227-231
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 229, Issue 2, March 2005, Pages 227-231
نویسندگان
Hiroshi Kudo, Masaru Nagata, Hiroya Wakamatsu, Shigeo Tomita,