Effect of the substrate temperature on the properties of Ga-doped ZnO films for photovoltaic cell applications deposited by a pulsed DC magnetron sputtering with a rotating cylindrical target

► GZO films by pulsed DC sputter with a rotating cylindrical target were prepared. ► The film deposited at 230 °C exhibited the best electrical and optical properties. ► The same film also showed crater-like surface after etching in HCl solution. ► The films can be used as an anti-reflective window electrode for photovoltaic cells.