Size- and temperature-dependent thermoelectric and electrical properties of Bi88Sb12 alloy thin films

The thin films of Bi88Sb12 of different thicknesses have been vacuum deposited on glass and silicon substrates using the flash evaporation method. The structural characterization was carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The composition and thicknesses of as-grown and annealed films were measured by the quartz crystal thickness monitor and Rutherford back scattering spectroscopy (RBS). The thermoelectric power and electrical resistivity measurement have been carried out on the films in the temperature range 100-300 K. The thickness dependences of electrical resistivity and thermoelectric power of thin films have been analyzed using the effective mean-free path model. The thermoelectric power factors of films have been calculated and the nature of carrier scattering in these films has been reported.