کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10676271 1011292 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dielectric properties of sol-gel derived Ta2O5 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Dielectric properties of sol-gel derived Ta2O5 thin films
چکیده انگلیسی
The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-105 Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 77, Issue 3, 18 February 2005, Pages 329-335
نویسندگان
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