Pressure-induced formation of electrically active centres in irradiated silicon: comparison of electron and neutron irradiation

The effect of annealing at 300-500 °C under enhanced hydrostatic pressure (up to 1.2 GPa) in argon ambient on the interstitial oxygen aggregation (thermal donors) in Czochralski-grown silicon subjected to electron and neutron irradiation was investigated by infrared absorption and electrical techniques. Strong pressure- and irradiation-enhanced changes in oxygen concentration, formation of intrinsic p-n-junctions, conversion of conductivity type due to formation of the thermal donors and thermal acceptors were found. A comparison with neutron-irradiated samples is made.