کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10706224 | 1023382 | 2016 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of residual promoter to photoluminescence of CVD grown MoS2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of residual promoter to photoluminescence of CVD grown MoS2 Influence of residual promoter to photoluminescence of CVD grown MoS2](/preview/png/10706224.png)
چکیده انگلیسی
Monolayer MoS2 has attracted extensive attention owing to its promising applications in optoelectronic devices. Recently, uniform and highly crystalline monolayer MoS2 was grown through chemical vapor deposition (CVD) using seed materials as a growth promoter. However, residual seed materials can remain on the surface of a monolayer MoS2 flake on a SiO2/Si substrate after growth. Here, we observe drastically increased photoluminescence (PL) intensity at the edge of MoS2 flake where residual particles are attached after repeated laser irradiation. On the other hand, the PL intensity of pure MoS2 remained almost the same. We attribute this to the effect of p-doping of the edge MoS2 by the adsorbed H2O and O2 molecules in the residual particles. The p-doping effect of MoS2 is confirmed by the confocal PL and Raman spectroscopy analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 16, Issue 9, September 2016, Pages 1223-1228
Journal: Current Applied Physics - Volume 16, Issue 9, September 2016, Pages 1223-1228
نویسندگان
Hye Min Oh, Gang Hee Han, Hyun Kim, Mun Seok Jeong,