کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10706252 | 1023451 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
N,Nâ²-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (â2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 Ã 10â4 cm2/V s and 1.1 Ã 10â4 cm2/V s under the electric field of 500 (V/cm)1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 5, Issue 6, September 2005, Pages 615-618
Journal: Current Applied Physics - Volume 5, Issue 6, September 2005, Pages 615-618
نویسندگان
Jung Yong Kim, In Jae Chung, Changhee Lee, Young Chul Kim, Jai Kyeong Kim, Jae-Woong Yu,