کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10710247 | 1024661 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ESR study of new layered semiconductor Ga2Cr1.33Se5
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The Ga2Cr1.33Se5 compound is a layered semiconductor and it can be visualised as layers of chromium ions with nearest-neighbour distances of 0.378Â nm within layers and interlayer distances are alternately of 0.626 and 0.923Â nm. The ESR measurements of a single crystal as a function of temperature were performed; a single Lorentzian-type spectrum was observed for T>20Â K. The observed angular anisotropy of the linewidth has been satisfactorily explained on the basis of the anisotropic exchange model. The peculiarities of ESR parameters (intensity, ÎB, Br) below Tâ
20K can be interpreted taking into account two mechanisms: (i) presence ferromagnetic, exchange interactions between in-plane chromium ions and antiferromagnetic interplane coupling which means magnetic dimensionality crossover from 2- to 3-d system; (ii) appearance of a spin disorder.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 285, Issue 3, January 2005, Pages 379-385
Journal: Journal of Magnetism and Magnetic Materials - Volume 285, Issue 3, January 2005, Pages 379-385
نویسندگان
D. Skrzypek, I. Okonska-Kozlowska, K. Szamocka, E. Malicka,