Theoretical study of the magnetoresistance under electric field in III-V diluted magnetic semiconductor

In this paper we study the magnetoresistance and the coupling energy in heterostructures formed by two magnetic layers Ga1−xMnxAs separated by a nonmagnetic spacer GaAs under an electric field and develop a mean-field theory of carrier in diluted magnetic semiconductor. Our main result indicates that magnetoresistance can be dramatically suppressed by an external electric field.