کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10715718 | 1027351 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 648, Issue 1, 21 August 2011, Pages 73-76
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 648, Issue 1, 21 August 2011, Pages 73-76
نویسندگان
Jiang Hua, H.J. Kim, Gul Rooh, H. Park, Sunghwan Kim, JongKyu Cheon,