کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10716128 | 1027535 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of type inversion of n-bulk in 10Â MeV proton-irradiated FZ silicon detectors using a scanning electron microscope
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Based on the results of capacitance-voltage measurements and transient current technique, it was earlier deduced that the n-type bulk of float zone silicon radiation detectors changes type in heavy irradiation. This paper describes the results of measuring the voltages and electric fields with a scanning electron microscope using the voltage-contrast effect, inside radiation detectors that were irradiated with 10Â MeV protons with several fluences. The results confirm the earlier observations and give more accuracy to the electric field measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issue 3, 1 November 2005, Pages 357-363
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issue 3, 1 November 2005, Pages 357-363
نویسندگان
Kari Leinonen, Tanja Palviainen, Tuure Tuuva, Esa Tuovinen, Jaakko Härkönen, Panja Luukka,